| PART |
Description |
Maker |
| FJP5027R FJP5027RTU FJP5027OTU |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| FJI5603D FJI5603DTU |
NPN Silicon Transistor; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| FJL6920TU |
NPN Triple Diffused Planar Silicon Transistor; Package: TO-264; No of Pins: 3; Container: Rail 20 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-264AA
|
Fairchild Semiconductor, Corp.
|
| 2SC3978A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 2 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
|
| MTB4N80E_D ON2428 ON2426 MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| 2SC5303 |
25 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
Sanyo Semicon Device
|
| BU2522AF |
Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SC4020 |
Isolated Flyback Switching Regulator with 9V Output 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| BC337-25RL1G |
Amplifier Transistors NPN Silicon 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| BU4525DF |
Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BU2525DX |
Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
|
